Effects of an intense, high-frequency laser field on bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well.
Identifieur interne : 000E62 ( Main/Exploration ); précédent : 000E61; suivant : 000E63Effects of an intense, high-frequency laser field on bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well.
Auteurs : RBID : pubmed:23113959Abstract
Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a GaxIn1 - xNyAs1 - y/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.
DOI: 10.1186/1556-276X-7-606
PubMed: 23113959
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The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">23113959</PMID><DateCreated><Year>2012</Year><Month>12</Month><Day>04</Day></DateCreated><DateCompleted><Year>2012</Year><Month>12</Month><Day>05</Day></DateCompleted><DateRevised><Year>2013</Year><Month>02</Month><Day>15</Day></DateRevised><Article PubModel="Electronic"><Journal><ISSN IssnType="Electronic">1556-276X</ISSN><JournalIssue CitedMedium="Internet"><Volume>7</Volume><Issue>1</Issue><PubDate><Year>2012</Year></PubDate></JournalIssue><Title>Nanoscale research letters</Title><ISOAbbreviation>Nanoscale Res Lett</ISOAbbreviation></Journal><ArticleTitle>Effects of an intense, high-frequency laser field on bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well.</ArticleTitle><Pagination><MedlinePgn>606</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1186/1556-276X-7-606</ELocationID><Abstract><AbstractText>Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a GaxIn1 - xNyAs1 - y/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Ungan</LastName><ForeName>Fatih</ForeName><Initials>F</Initials><Affiliation>Physics Department, Cumhuriyet University, Sivas, 58140, Turkey. fungan@cumhuriyet.edu.tr.</Affiliation></Author><Author ValidYN="Y"><LastName>Yesilgul</LastName><ForeName>Unal</ForeName><Initials>U</Initials></Author><Author ValidYN="Y"><LastName>Sakiroğlu</LastName><ForeName>Serpil</ForeName><Initials>S</Initials></Author><Author ValidYN="Y"><LastName>Kasapoglu</LastName><ForeName>Esin</ForeName><Initials>E</Initials></Author><Author ValidYN="Y"><LastName>Erol</LastName><ForeName>Ayse</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Arikan</LastName><ForeName>Mehmet Cetin</ForeName><Initials>MC</Initials></Author><Author ValidYN="Y"><LastName>Sarı</LastName><ForeName>Huseyin</ForeName><Initials>H</Initials></Author><Author ValidYN="Y"><LastName>Sökmen</LastName><ForeName>Ismail</ForeName><Initials>I</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2012</Year><Month>10</Month><Day>31</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Nanoscale Res Lett</MedlineTA><NlmUniqueID>101279750</NlmUniqueID><ISSNLinking>1556-276X</ISSNLinking></MedlineJournalInfo><OtherID Source="NLM">PMC3512540</OtherID></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2012</Year><Month>7</Month><Day>16</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2012</Year><Month>10</Month><Day>4</Day></PubMedPubDate><PubMedPubDate PubStatus="aheadofprint"><Year>2012</Year><Month>10</Month><Day>31</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>11</Month><Day>2</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>11</Month><Day>2</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>11</Month><Day>2</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>epublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">1556-276X-7-606</ArticleId><ArticleId IdType="doi">10.1186/1556-276X-7-606</ArticleId><ArticleId IdType="pubmed">23113959</ArticleId><ArticleId IdType="pmc">PMC3512540</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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